Semiconductor device and method for manufacturing the same

ABSTRACT

A substrate ( 1 ) and a semiconductor chip ( 5 ) are connected by means of flip-chip interconnection. Around connecting pads ( 3 ) of the substrate ( 1 ) and input/output terminals ( 10 ) of the semiconductor chip ( 5 ), an underfill material ( 7 ) is injected. The underfill material ( 7 ) is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %. Also, a first main surface of the substrate ( 1 ), which is not covered with the underfill material ( 7 ), and the side surfaces of the semiconductor chip ( 5 ) are encapsulated with a molding material ( 8 ). The molding material ( 8 ) is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C. An integrated body of the substrate ( 1 ) and the semiconductor chip ( 5 ), which are covered with the molding material ( 8 ), is thinned from above and below.

TECHNICAL FIELD

The present invention relates to a semiconductor device and a method ofmanufacturing the same.

BACKGROUND ART

A three-dimensional integrated semiconductor circuit device in which aplurality of semiconductor chips are stacked on a semiconductorsubstrate is known (see, e.g., Patent Literature 1). Thisthree-dimensional integrated semiconductor circuit device ismanufactured by stacking a plurality of semiconductor chips on a firstmain surface of the semiconductor substrate and thinly grinding thesemiconductor substrate from the second main surface side thereof.

For manufacturing, recessed parts are provided on the first main surfaceof the semiconductor substrate first, and conductive portions are formedin the recessed parts. Then a plurality of semiconductor chips arestacked on the first main surface of the semiconductor substrate. Anencapsulation material is in turn injected in the space around thesemiconductor chips. After the three-dimensional structure is formed inthis manner, the semiconductor substrate is thinned from the second mainsurface side until the conductive parts penetrate to the second mainsurface.

[Patent Literature 1] Unexamined Japanese Patent Application KOKAIPublication 2005-51150 DISCLOSURE OF INVENTION Problem to be Solved bythe Invention

However, the foregoing manufacturing method uses only one type ofencapsulation material, which causes various problems. Morespecifically, when the space is small between the semiconductor chipsand the semiconductor substrate, the encapsulation material is notinjected well in the space, whereby voids are likely to occur. Moreover,when the encapsulation material is cured, the semiconductor substrate iseventually bent to a significant extent because the encapsulationmaterial shrinks. Also, when pads are formed on the second main surfaceof the semiconductor substrate, the semiconductor substrate iseventually deteriorated or deformed due to thermal deformation of theencapsulation material.

In view of the above, there is a call for a semiconductor device ofthree-dimensional structure and a method of manufacturing the same toprevent voids from forming in the encapsulation material and deformationof the substrate.

Means for Solving the Problem

A semiconductor device according to the present invention comprises:

a substrate having connecting pads which are formed on a first mainsurface thereof and input/output pads which are formed on a second mainsurface thereof, the input/output pads being connected to the connectingpads;

a semiconductor chip disposed to oppose the first main surface of thesubstrate, input/output terminals thereof being connected to theconnecting pads;

an underfill material that is injected into a space between thesubstrate and the semiconductor chip; and

a molding material that encapsulates the first main surface of thesubstrate, which is not covered with the underfill material, and sidesurfaces of the semiconductor chip.

It is preferable that the semiconductor chip is disposed such that afirst main surface thereof, on which a circuit is formed, opposes thefirst main surface of the substrate.

It is preferable that the underfill material is a composite material offiller and resin in which the maximum particle diameter of the filler is5 μm or below and whose filler content is 40 to 60 wt %; and

that the molding material is a composite material of filler and resinwhose filler content is over 75 wt % and in which the glass transitiontemperature of the resin is over 180° C.

Also, a method of manufacturing a semiconductor device according to thepresent invention comprises:

a connecting pad forming step of forming connecting pads on a first mainsurface of a substrate;

a connecting step of disposing a semiconductor chip such that thesemiconductor chip opposes the first main surface of the substrate andconnecting the connecting pads to input/output terminals provided on afirst main surface of the semiconductor chip;

an underfill material injecting step of injecting an underfill materialin a space between the substrate and the semiconductor chip;

a molding material forming step of forming a molding material thatencapsulates side surfaces of the semiconductor chip and the first mainsurface of the substrate, which is not covered with the underfillmaterial; and

a first thinning step of thinning the substrate from a side of a secondmain surface thereof.

It is preferable that in the connecting step, the semiconductor chip isdisposed such that the first main surface thereof, on which a circuit isformed, opposes the first main surface of the substrate.

It is preferable to further comprise a second thinning step of, afterthe molding material forming step, thinning the semiconductor chip froma side of a second main surface thereof.

It is preferable that the underfill material is a composite material offiller and resin in which the maximum particle diameter of the filler is5 μm or below and whose filler content is 40 to 60 wt %.

It is preferable that the molding material is a composite material offiller and resin whose filler content is over 75 wt % and in which theglass transition temperature of the resin is over 180° C.

It is preferable that in the molding material forming step, thesubstrate, except the second main surface thereof, and the semiconductorchip are immersed into a molding material melt and are pressed byapplying pressure thereto from the side of the second main surface ofthe substrate at a specified temperature for a specified period in avacuum environment, and the molding material melt is cured, so as toform the molding material.

It is preferable that in the molding material forming step, the secondmain surface of the substrate is fixed to a film-shaped jig, and thesubstrate and the semiconductor chip are immersed into the moldingmaterial melt and pressed by applying pressure thereto from a side ofthe film-shaped jig.

It is preferable that in the molding material forming step, a spacer isinserted between the second main surface of the substrate and thefilm-shaped jig, and the substrate is fixed to the film-shaped jig, soas to form the molding material that covers the second main surface ofthe substrate.

EFFECT OF THE INVENTION

The present invention enables provision of a semiconductor device ofthree-dimensional structure and a manufacturing method thereof forrestraining occurrence of voids in an encapsulation material anddeformation of the substrate.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional diagram of the semiconductor deviceaccording to an embodiment of the present invention.

FIG. 2 is a cross-sectional diagram of a modified example of thesemiconductor device according to the embodiment of the presentinvention.

FIG. 3 is a diagram illustrating a manufacturing process of thesemiconductor device according to the embodiment of the presentinvention.

FIG. 4 is a diagram illustrating manufacturing steps subsequent to FIG.3.

FIG. 5 is a diagram illustrating manufacturing steps subsequent to FIG.4.

FIG. 6 is a diagram illustrating manufacturing steps subsequent to FIG.5.

FIG. 7 is a diagram illustrating manufacturing steps subsequent to FIG.6.

FIG. 8 is a diagram illustrating manufacturing steps subsequent to FIG.7.

FIG. 9 is a diagram illustrating manufacturing steps subsequent to FIG.8.

FIG. 10 is a diagram illustrating manufacturing steps subsequent to FIG.9.

FIG. 11 is a diagram illustrating a manufacturing step of thesemiconductor device according to another embodiment of the presentinvention.

FIG. 12 is a diagram illustrating manufacturing steps subsequent to FIG.11.

FIG. 13 is a diagram illustrating a manufacturing process of thesemiconductor device according to yet another embodiment of the presentinvention.

FIG. 14 is a diagram illustrating manufacturing steps subsequent to FIG.13.

FIG. 15 is a diagram illustrating manufacturing steps subsequent to FIG.14.

EXPLANATION OF REFERENCE NUMERALS

-   1 Substrate-   2 Penetrating electrode-   3 Connecting pad-   4 Element-   5 Semiconductor chip-   6 Bump-   7 Underfill material-   8 Molding material-   9 Input/output pad-   10 Input/output terminal-   11 Fan-out wiring-   12 Frame jig-   13 Adhesion film-   14 Molding material melt-   15 Cavity form-   16 Press platen-   17 Press direction-   18 Spacer-   19 Through hole-   20 Vertical electrode

BEST MODE FOR CARRYING OUT THE INVENTION

The text to follow specifically explains embodiments of the presentinvention by referring to the attached drawings. FIG. 1 is across-sectional diagram illustrating the semiconductor device accordingto an embodiment of the present invention.

As shown in FIG. 1, the semiconductor device according to the presentembodiment has a substrate 1 on whose surface elements 4 are formed.Used as the substrate 1 is, e.g., a semiconductor substrate with asmooth surface, which is made of silicon (Si) or gallium arsenide (GaAs)so that elements can be formed on the substrate. A high-resistancesilicon substrate is in particular an easy semiconductor substrate toprocess, and another preferable of such type of substrate is high-speedsignal propagation. An insulating substrate made of glass, sapphire,ceramics, resin, and the like can be used as well. To achieve high-speedsignal propagation, effortless formation of an electrode penetratingthrough the substrate 1, and reduction of the thickness of semiconductordevices, the thickness of the substrate 1 should be preferably below 100μm, below 50 μm in particular. Also, when forming a hole on thesubstrate 1 through which an electrode penetrates, the thickness of thesubstrate 1 is preferably below 30 μm. Hereinafter, the surface of thesubstrate 1 on which the elements 4 are formed is referred to as thefirst main surface, and the opposite surface thereof is referred to asthe second main surface.

The elements 4 are, e.g., capacitors for decoupling of the voltage ofthe power supply, The elements 4 may be either active or passive.Penetrating electrodes 2 are ones that penetrate through the substrate1, and the penetrating electrodes 2 are formed of conductive bodies witha small resistance, e.g., copper (Cu). Connecting pads 3 are formed onthe elements 4 so as to be connected to the penetrating electrodes 2.However, the connecting pads 3 do not necessarily have to be formed onthe elements 4, and they may be formed on the substrate 1. Morespecifically, as shown in FIG. 1, the penetrating electrodes 2 areformed to penetrate through the elements 4, but the penetratingelectrodes 2 may be formed in an area where the elements 4 are notformed. Input/outputs pads 9 are formed on the second main surface ofthe substrate 1 so as to be connected to the penetrating electrodes 2.

In the semiconductor device according to the present embodiment, thesemiconductor chip 5 is stacked on the elements 4. A circuit andinput/output terminals 10 are formed on a first main surface of thesemiconductor chip 5, which opposes the first main surface of thesubstrate 1. The circuit comprises, e.g., a transistor and a resistor.The connecting pads 3, the input/output pads 9, and the input/outputterminals 10 of the semiconductor chip 5 are formed of conductive bodieswith a small resistance, e.g., Cu. These conducting bodies have theirsurfaces covered with, e.g., Au (gold) and Ni (nickel) on an as-neededbasis (not shown). The input/output terminals 10 of the semiconductorchip 5 and the connecting pads 3 are connected via bumps 6 by means offlip-chip interconnection. The bumps 6 are made of, e.g., a soldermaterial or Au.

An underfill material 7 is injected between the semiconductor chip 5 andthe substrate 1. The underfill material 7 is a composite material ofresin and filler in which the maximum particle diameter of the filler is5 μm or below and whose filler content is 40 to 60 wt %, as will bedescribed below. The first main surface of the substrate 1, which is notcovered with the underfill material 7, and the side surfaces of thesemiconductor chip 5 are encapsulated with a molding material 8. Themolding material 8 is a composite material of filler and resin whosefiller content is over 75 wt % and in which the glass transitiontemperature of the resin is over 180° C., as will be discussed below.

As far as the semiconductor device shown in FIG. 1 is concerned, thepenetrating electrodes 2 are at the positions of the input/outputterminals 10 of the semiconductor chip 5. Also, the input/output pads 9are at the positions of the input/output terminals 10 of thesemiconductor chip 5. As this structure is introduced, e.g., when theelements 4 formed on the substrate 1 are capacitors, they can be used ascapacitors for decoupling between the grounding terminals and the powersupply terminals of the semiconductor chip 5. Power supply terminals arethe input/output terminals 10 used to supply the semiconductor chip 5with a power supply potential, and grounding terminals are theinput/output terminals 10 used to supply the semiconductor chip 5 with aground potential. For example, electrodes provided on upper portions ofthe elements 4 (hereinafter referred to as “top electrodes”) andelectrodes provided on lower portions thereof (hereinafter referred toas “bottom electrodes”) are connected to the connecting pads 3, as willbe described below. Then the connecting pads 3 connected to the topelectrodes are connected to the power supply terminals of thesemiconductor chip 5, and the connecting pads 3 connected to the bottomelectrodes are connected to the grounding terminals of the semiconductorchip 5. The connecting pads 3 connected to terminals other than thepower supply and grounding terminals of the semiconductor chip 5 are notconnected to the bottom and top electrodes of the elements 4. Therefore,even when using the semiconductor chip 5 without a decoupling capacitor,the power supply and grounding terminal of the semiconductor chip 5 canbe added with a decoupling capacitor. This addition can be made withoutchanging the design of a mounting substrate mounted with thesemiconductor device or that of an interposer according to thisembodiment.

When the semiconductor chip 5 comprises a plurality of the input/outputterminals 10, by means of flip-chip interconnection, the input/outputterminals 10 are connected via the bumps 6 to the connecting pads 3 onthe elements 4 or the penetrating electrodes 2. To protect the flip-chipinterconnection, the underfill material 7 is injected between thesemiconductor chip 5 and the substrate 1 or the elements 4.

It is preferable that the thermal expansion difference is small betweenthe underfill material 7 and the semiconductor chip 5. Furthermore, whenminiaturization is made to an extent where the pitch of the input/outputterminals 10 is, e.g., below 200 μm or the space between thesemiconductor chip 5 and the substrate 1 is minimized, the underfillmaterial 7 needs to be injected sufficiently without causing voids tooccur. It is also necessary that the filler contained in the underfillmaterial 7 does not damage the elements 4 formed on the substrate 1 andthe semiconductor chip 5.

In light of the above, a material preferable as the underfill material 7is a composite material of resin and filler whose filler content is 40to 60 wt % and in which the maximum particle diameter of the filler is 5μm or below. Here, a preferable filler material is silica glass due toits low shrinkage and low thermal expansion properties. Also, silicaglass with a spherical shape is even more preferable as a fillermaterial in terms of flow property. The maximum particle diameter andcontent of the filler are set to 5 μm or below and 40 to 60 wt %,respectively, because it was experimentally proven that voids did notoccur in the underfill material 7 and the reliability of a completedsemiconductor device was high in the above ranges. The experimentalresults showed that when the diameter of the filler was large, voidswere likely to occur, and the likelihood of void occurrence was high atfiller contents over 60 wt %. Also, the temperature cycle experimentshowed that failure was likely to occur at filler contents below 40 wt%. Use of the above-mentioned underfill material 7 effectively restrainsoccurrence of voids. Therefore, the connecting pads 3 and theinput/output terminals 10 of the semiconductor chip 5, which areconnected by means of flip-chip interconnection, can be protectedwithout damaging the semiconductor chip 5 and the elements 4.

Moreover, by encapsulation the side surfaces of the semiconductor chip 5and the first main surface of the substrate 1 with the molding material8, some process of the manufacturing method can be made easier. The maineffect is that the substrate 1 and the semiconductor chip 5 can bethinly grinded together with the molding material 8 being formedthereon, which will be explained in detail below in the embodiment ofthe manufacturing method. Since the substrate 1 and the semiconductorchip 5 are not be thinned separately, damage to these components can beprevented.

Also, the thickness of the substrate 1 can be reduced. The smaller thethickness of the substrate 1, the shorter the time required for formingthe penetrating electrodes 2.

The molding material 8 must have low-shrinkage, low-thermal expansion,and highly heat resistant properties. A material preferable as themolding material 8 is a composite material of filler and resin whosefiller content is over 75 wt % and in which the glass transitiontemperature of the resin is over 180° C. Here, the preferable fillermaterial is silica glass due to its low-shrinkage and low-thermalexpansion properties. Also, silica glass with a spherical shape is evenmore preferable in terms of flow property. It was experimentally foundthat the wafer was bent to a significant extent when encapsulation wasmade using the molding material 8 at filler contents below 75 wt %. Itwas also experimentally found that a semiconductor device manufacturedusing a resin whose glass transition temperature was below 180° C. wasas well bent to a significant extent when forming input/output pads onthe rear surface of the substrate. Using, as the molding material 8, acomposite material of filler and resin whose filler content is over 75wt % and in which the glass transition temperatures of the resin is over180° C., shrinkage deformation of the substrate 1 can be effectivelyprevented when forming the molding material 8. Also, since the moldingmaterial 8 is highly heat resistant, the likelihood of occurrence ofthermal deformation of the molding material 8 is low even at highprocess temperatures. Therefore, for example, a process such as formingthe input/output pads 9 on the rear surface of the substrate 1 can bereadily performed.

As shown in FIG. 1, it is preferable for the sake of releasing heat thatthe surface of the semiconductor chip 5 of a completed semiconductordevice that does not oppose the first main surface of the substrate 1 isnot covered with the molding material 8.

As explained above, according to the present embodiment, used as theunderfill material 7 injected between the semiconductor chip 5 and thesubstrate 1 is a composite material of filler and resin whose fillercontent is 40 to 60 wt % and in which the maximum particle diameter ofthe filler is 5 μm or below. Therefore, when the semiconductor chip 5 ismade to have high-pin counts and the space is small around theinput/output terminals 10 of the semiconductor chip 5 and the connectingpads 3, which are connected by means of flip-chip interconnection, theunderfill material 7 can be injected to a satisfactory extent withoutcausing voids to occur. By setting the maximum particle diameter of thefiller to 5 μm or below, the input/output terminals 10 of thesemiconductor chip 5 and the connecting pads 3, which are connected bymeans of flip-chip interconnection, can be protected while preventingthe filler from damaging the elements 4 formed on the substrate 1 andthe semiconductor chip 5.

Also, in the embodiment, the first main surface of the substrate 1 andthe side surfaces of the semiconductor chip 5 are encapsulated with themolding material 8, which is a composite material of filler and resinwhose filler content is over 75 wt % and in which the glass transitiontemperature of the resin is over 180° C. The molding material 8 haslow-shrinkage and low-thermal expansion properties, whereby warpage ofthe substrate 1, which is eventually caused by encapsulation with themolding material 8 and thinly grinding the substrate 1, can beeffectively prevented. In addition, the heat-resistant property of themolding material 8 prevents thermal deformation from occurring to themolding material, e.g., when the temperature at which the input/outputpads 9 are formed on the second main surface of the substrate 1 is high.

According to the above embodiment, the input/output pads 9 are formed atthe positions of the penetrating electrodes 2 on the second main surfaceof the substrate 1 as shown in FIG. 1, but the embodiment is not limitedthereto. For example, as shown in FIG. 2, fan-out wirings 11 may beformed on the second main surface of the substrate 1, and theinput/output pads 9 be formed on the fan-out wirings 11.

The text to follow explains a manufacturing method of the semiconductordevice according to the embodiment of the present invention. Themanufacturing method according to the present embodiment is explained inorder of the processes illustrated in FIGS. 3 to 10 and FIG. 1.

FIG. 3 shows an example where 3×3 (=9) semiconductor devices aremanufactured on one substrate 1. FIG. 3 illustrates a cross-section ofthe substrate 1, on whose first main surface the 3×3 (=9) elements 4 areformed. The substrate 1 is, e.g., a 4-inch glass wafer with a thicknessof 500 μm.

Firstly, as shown in FIG. 3, the elements 4 are formed on the first mainsurface of the substrate 1. As the elements 4, e.g. nine 20-square mmcapacitors of MIM (Metal Insulation Metal) structure are formed. Onecapacitor is formed for one semiconductor device. In this case, bottomelectrodes are formed on the substrate 1 by the DC magnetronsputter-depositing method, whereby a film of Ti (titanium) and Ru(ruthenium) is formed from the substrate 1 side in the order of Ti andRu. The film thickness of Ti and Ru is, e.g., 50 nm. Next, by the RFsputter-depositing (radio frequency sputter-depositing) method, SrTiO₃(STO), to which Mn is doped, e.g., at an Mn concentration of 5%, isformed as a dielectric thin film to have a thickness of 60 nm, e.g., at400° C. Also, on the dielectric thin film, a film of Ru is formed as atop electrode using the DC magnetron sputter-depositing method. Thethickness of the Ru film is, e.g., 50 nm.

The elements 4 should be preferably protected by e.g., a Si oxide or Sinitride film, except areas thereof that are used to establish anelectric connection with the input/output terminals 10 of thesemiconductor chip 5. Also, the elements 4 may be formed in areas exceptthose where the penetrating electrodes 2 are formed in the processdescribed below.

Next, by the plasma CVD (Chemical Vapor Deposition) method usingSi(OC₂H₅)₄(TEOS) as a material, a SiO₂ film with a thickness of, e.g., 1μm is formed. Thereafter, on the SiO₂ film, RIE (Reactive Ion Etching)is performed to form openings through which connection can be madebetween the top and bottom electrodes of the capacitors as well asopenings through which connection cannot be made therebetween.

Next, Cu plating is performed by using a Cu and Ti sputter-depositedfilm as a seed layer and a resist as a mask. Thereafter, the resist isstripped and the seed layer is removed by etching to obtain theconnecting pads 3. The positions of the connecting pads 3 all agree withthe positions where the penetrating electrodes 2 are to be formed. Forexample, the pitch is 200 μm, and the arrangement is area array. Some ofthe connecting pads 3 are connected to capacitors via openings formed onthe SiO₂ film, but the others are not. In the semiconductor deviceaccording the embodiment, the connecting pads 3 corresponding to thepower supply terminals of the semiconductor chips 5 connected to thecapacitors are connected to the top electrodes. The connecting pads 3corresponding to the grounding terminals are connected to the bottomelectrodes. The connecting pads 3 corresponding to terminals other thanthe power supply and grounding terminals are not connected to capacitorelements.

In turn, on the surfaces of the connecting pads 3, by electrolessplating, films of Au and Ni are formed to have thicknesses of, e.g.,0.05 μm and 5 μm, respectively. Then, Pb-free solder paste is printed onthe connecting pads 3, and reflow is performed for pre-soldering.

Next, as shown in FIG. 4, the substrate 1 and the semiconductor chips 5are connected. The semiconductor chips 5 are, e.g., 20 mm-square CPUswith a thickness of 675 μm. On the semiconductor chips 5, the bumps 6are formed in advance by Pb-free soldering. Using flux, the input/outputterminals 10 of the semiconductor chips 5 and the connecting pads 3 areconnected by flip-chip interconnection.

Next, as shown in FIG. 5, the underfill material 7 is injectedsubsequent to washing the flux. In the embodiment, used as the underfillmaterial 7 is a composite material of filer and resin in which thefiller particle diameter is 5 μm or below, e.g., 3 μm, and whose fillercontent is 40 to 60 wt %, e.g., 50 wt %.

Next, as shown in FIGS. 6 and 7, by the compression molding method, thefirst main surface of the substrate 1, the second main surfaces of thesemiconductor chips 5, and the side surfaces of the substrate 1 and thesemiconductor chips 5 are encapsulated with the molding material 8. Asshown in FIG. 6, the second main surface of the substrate 1 is firstadhered to an adhesion film 13, which is one of the jigs used in thisprocess. The material of the adhesion film 13 is not limited, but highlyheat-resistant ones are preferable, such as a polyimide film with anadhesive. Also, as in the case of the substrate 1, frame jigs 12 areadhered to the adhesion film 13. The frame jigs 12 are provided to coverthe surfaces of the substrate 1 other than the second main surfacethereof, which is adhered to the adhesion film 13, with a moldingmaterial melt 14. No particular limitations apply to the frame jigs 12as far as material is concerned. However, a metal, e.g., Cu, ispreferable as the molding process and removal subsequent thereto arestreamlined thereby.

Next, an integrated body of the substrate 1 and the frame jigs 12adhered to the adhesion film 13 is immersed into the molding materialmelt 14 in a cavity form 15, so that the adhesion film 13 is on top.Thereafter, pressure is uniaxially applied in the press direction 17 bya press platen 16. The molding material 8 is a composite material offiller and resin whose filler content is over 75 wt % and in which theglass transition temperature of the resin is over 180° C. To cure themolding material melt 14, for example, it is pressed by applyingpressure thereto in a vacuum environment at 175° C. for two hours. As aresult of the above, as shown in FIG. 7, the molding material 8 isformed on the first main surface of the substrate 1, the second mainsurfaces of the semiconductor chips 5, and the side surfaces of thesubstrate 1 and the semiconductor chips 5.

In the manufacturing method according to the present embodiment, due tothe low-shrinkage and low-heat expansion properties of the moldingmaterial 8, the deformation (warpage) of the substrate 1 can berestrained after the molding material 8 is formed. Using the compressionmolding method, whereby resin hardening and cooling can be performedwith pressure being exerted, deformation of the substrate 1 can beeffectively prevented after formation of the molding material 8.

Also, in the manufacturing method according to the present embodiment,the use of the frame jigs 12 obviates the need for manufacturing thecavity form 15, which is expensive, for various sizes of the substrate1. The frame jigs 12 are manufactured according to the height of themolding material 8 to be formed, but the cavity form 15 may bemanufactured according to the size of the substrate 1.

In the manufacturing method according to the present embodiment, thematerial of the molding material 8 is powdery or granular. After arequired amount of the material of the molding material 8 is laid in thecavity form 15, it is melted for press processing.

Next, as shown in FIG. 8, the semiconductor chips 5 and the substrate 1,which are covered with the molding material 8, are grinded. Firstly, themolding material 8 covering the second main surfaces of thesemiconductor chips 5 is grinded until the second main surfaces thereofare exposed.

In the embodiment, the semiconductor chips 5 are disposed such that thefirst main surfaces thereof, on which circuits including transistorsexist, oppose the substrate 1. In other words, no circuits exist on thesecond main surfaces of the semiconductor chips 5, which are to begrinded. Thus, grinding the molding material 8, which covers thesemiconductor chips 5, does not affect the feature of the semiconductorchips 5.

Next, the integrated body of the semiconductor chips 5 and the substrate1 is grinded to an extent where its total thickness is reduced to, e.g.,800 μm. Thereafter, the substrate 1 is grinded from the second mainsurface side thereof for thinning the substrate 1 to reduce itsthickness to, e.g., 20 μm.

After grinding the substrate 1, the molding material 8 covering thesecond main surfaces of the semiconductor chips 5 may be grinded. Inaddition, methods other than grinding can be adopted, but grinding issuitable for the manufacturing method according to the presentembodiment in terms of speed and flatness.

Next, by means of RIE, the second main surface of the substrate 1 isetched by, e.g., 2 μm. Here, to reduce the thickness of the substrate 1,drying etching is performed after grinding to remove scratches producedby grinding, which effectively restrains warpage of the substrate 1.Thereafter, as shown in FIG. 9, using a resist as a mask, the throughholes 19 are formed from the second main surface of the substrate 1 byRIE so that the internal diameter thereof is, e.g., 50 μm.

Next, a seed layer of Cu and Ti is formed in the through holes 19 by thesputter method, and using a resist as a mask, Cu plating is performed byelectrolytic filling plating. The penetrating electrodes 2 are therebyformed, as shown in FIG. 10. As the number of pins of the semiconductorchips 5 connected thereto increases—i.e., the pitch becomes narrower—theaspect ratio of the penetrating electrodes 2 increases. Therefore, it ispreferable to form the penetrating electrodes 2 of low-resistancematerials, such as Cu, by filling plating. Also, when forming thepenetrating electrodes 2, the input/output pads 9 shown in FIG. 1 aresimultaneously formed.

Finally, the integrated body of the substrate 1 and the semiconductorchips 5 is cut for each of the semiconductor chip 5 by dicing saw toobtain the semiconductor device shown in FIG. 1.

Covering the substrate 1 and the semiconductor chips 5 with the moldingmaterial 8 produces various effects.

Firstly, the integrated body of the substrate 1 and the semiconductorchips 5, which is covered with molding material 8, is thinly grinded.Therefore, the substrate 1 and the semiconductor chips 5 do not have tobe thinned separately. For example, unlike traditional practices,thinning of the substrate 1 does not require temporary fixing to aseating substrate.

Secondly, as mentioned above, the substrate 1 does not need to bethinned separately. Therefore, the substrate 1 can be manufactured tohave a thickness that is smaller than the thickness of the separatelythinned substrate 1. Traditionally, for example, when a siliconsubstrate is separately thinned, defects, such as cracks, frequentlyoccurred at substrate thicknesses about below 50 μm. In themanufacturing method according to the present embodiment, however, evenwhen the substrate 1 is thinly grinded to have a thickness below 20 μm,very few defects occur. Moreover, the amount of etching required forforming the through holes 19 can be reduced by decreasing the thicknessof the substrate L The time required for forming the through holes 19can be thereby shortened. Likewise, the time required for forming thepenetrating electrodes 2 can be shortened as well.

Thirdly, the molding material 8 is a composite material of filler andresin whose filler content is over 75 wt % and in which the glasstransition temperature of the resin is over 180° C. Accordingly, evenwhen manufactured at high temperatures, the connection between thesemiconductor chips 5 and the substrate 1 does not become defective andthe substrate 1 is not deformed due to thermal deformation of themolding material 8. Therefore, for example, drying etching and formationof an insulation film and the input/output pads 9 on the second mainsurface of the substrate 1 can be easily performed.

Fourthly, the molding material 8 is formed by applying thereto pressurein a vacuum environment. Occurrence of voids can be thus effectivelyrestrained during formation of the molding material 8.

Further, for example, the first main surface of the substrate 1 and theside surfaces of the semiconductor chips 5 are covered with the moldingmaterial 8. Therefore, when the second main surface of the substrate 1is thinned, failure of the substrate 1 from its edge can be prevented.

Still further, the underfill material 7 is a composite material offiller and resin in which the maximum particle diameter of the filler is5 μm or below and whose filler content is 40 to 60 wt %. Therefore,without damaging the semiconductor chips 5 and the elements 4 due to thefiller, it is possible to protect the connecting pads 3 and theinput/output terminals 10 of the semiconductor chips 5, which areconnected by means of flip-chip interconnection. Also, as occurrence ofvoids is effectively restrained in the underfill material 7 that hasbeen injected, the underfill material 7 can be formed in such a way thatit is highly reliable.

Yet still further, by forming capacitors as the elements 4 on the firstmain surface of the substrate 1, a capacitor for decoupling does notneed to be provided outside the semiconductor device. Thus, the size ofdevices mounted with the semiconductor device according to the presentembodiment can be thereby minimized.

The above-mentioned manufacturing method uses a glass substrate as thesubstrate 1. However, for example, an insulating substrate made ofresin, etc. or a semiconductor substrate such as a silicon substrate mayalso be used as the substrate 1. When the substrate 1 is not aninsulating one, the second main surface of the thinly grinded substrate1 and the inner walls of the through holes 19 must be covered with aninsulating film.

Yet still further, in the above-mentioned manufacturing method, themolding material 8 covering the second main surfaces of thesemiconductor chips 5 shown in FIG. 7 is grinded to an extent where thesecond main surfaces of the semiconductor chips 5 are exposed. However,for example, the second main surfaces of the semiconductor chips 5 maybe further thinned to reduce the thickness of a semiconductor deviceupon its completion.

For testing, a semiconductor device was manufactured based on themanufacturing method according to the above-mentioned embodiment. Ineach process, deformation of the substrate 1 and poor connection betweenthe substrate 1 and the semiconductor chip 5 did not occur. In theprocess of grinding the substrate 1, the substrate 1 was grinded toreduce the thickness thereof to 20 μm, but defects, such as cracks, didnot occur to the glass-made substrate. The capacitance was measuredbetween the input/output pads 9 connected to the power supply terminaland the input/output pads 9 connected to the ground terminal of thesemiconductor chip 5 of the semiconductor device manufactured fortesting. The measurement was 7 μF. When this was equipped on themounting substrate for confirmation of the operation thereof, the CPU,which is the semiconductor chip 5, operated normally without a capacitorprovided outside the semiconductor device. The elements 4 were therebyconfirmed to be able to function as capacitors for decoupling. The aboveresults confirmed that a semiconductor device of three-dimensionalstructure—i.e., the semiconductor chip 5 and the elements 4 stacked onthe substrate 1, which has been traditionally difficult tomanufacture—could be easily manufactured.

Next, a manufacturing method of the semiconductor device according toanother embodiment of the present invention is explained. Themanufacturing method according to this other embodiment, which isdifferent from the aforementioned manufacturing method, is illustratedin the order of the processes illustrated in FIGS. 3 to 5, FIG. 11, FIG.12, FIGS. 8 to 10, and FIG. 1. Detailed explanations of the processes ofFIGS. 3 to 5, FIGS. 8 to 10, and FIG. 1, which are identical to those ofthe aforementioned manufacturing method, are omitted.

The process of this manufacturing method up to the process of FIG.5—i.e., filling the underfill material 7 between the substrate 1 and thesemiconductor chips 5—are identical to those of the aforementionedmanufacturing method.

Next, as shown in FIGS. 11 and 12, the molding material 8 covering thesubstrate 1 and the semiconductor chips 5 is formed by the compressionmolding method. In this manufacturing method, the second main surface ofthe substrate 1 is covered with the molding material 8 as well.

Firstly, via the spacer 18, the substrate 1 is fixed to the adhesionfilm 13. The spacer 18 is adhered to the second main surface of thesubstrate 1 and the adhesion film 13, respectively. Next, as in the caseof the aforementioned manufacturing method, the molding material 8 isformed by the compression molding method. As a result of the above, itis possible to obtain the substrate 1 and the semiconductor chips 5covered with the molding material 8 as shown in FIG. 12.

In FIG. 12, the substrate 1 and the semiconductor chips 5 are entirelycovered with the molding material 8, except the areas to which thespacer 18 is attached. Based on the aforesaid method illustrated in FIG.6, a semiconductor device whose substrate 1 is bent only slightly can bemanufactured. However, this manufacturing method can further reducewarpage of the substrate 1. The process of this manufacturing methodsubsequent to the thinning process shown in FIG. 8 is identical to thatof the aforementioned manufacturing method.

Next, a manufacturing method of the semiconductor device according tostill another embodiment is explained. This manufacturing method isexplained in the order of the processes illustrated in FIG. 13, FIGS. 4to 7, FIG. 14, FIG. 15, and FIG. 1. Detailed explanations of theprocesses of FIGS. 4 to 7 and FIG. 1 of this manufacturing method, whichare identical to those of the aforementioned manufacturing methods, areomitted.

In the manufacturing method of this still other embodiment, which isillustrated in FIG. 13, the processes up to forming the elements 4 onthe first main surface of the substrate 1 are identical to those of theaforementioned manufacturing method, which is illustrated in FIG. 3.This manufacturing method differs from the aforementioned manufacturingmethod in that vertical electrodes 20, which are to be the penetratingelectrodes 2 in a later process, are formed in advance.

Firstly, cavities with, e.g., a depth of 50 μm and an inner diameter of50 μm are formed by ICP (Inductivity Coupled Plasma) etching.Subsequently, by the plasma CVD method using Si(OC₂H₅)₄(TEOS) as amaterial, a SiO₂ film with a thickness of, e.g., 1 μm is formed on thefirst main surface of the substrate 1 and the surfaces of the elements4. As a result, a SiO₂ film with a thickness of about 0.4 μm is formedon the inner walls of the cavities. Next, a plating seed layer of Cu andTi is formed, and filling plating is performed using a resist as a mask.Thereafter, by removing the resist and etching the seed layer, thevertical electrodes 20 and the connecting pads 3, as shown in FIG. 13,are formed simultaneously. The subsequent steps of this manufacturingmethod shown in FIGS. 4 to 7—i.e., connecting the substrate 1 and thesemiconductor chips 5 to forming the molding material 8—are identical tothose of the aforementioned manufacturing methods.

Next, as shown in FIG. 14, the integrated body of the substrate 1 andthe semiconductor chips 5 covered with the molding material 8 is thinlygrinded. FIG. 14 illustrates that the semiconductor chips 5 are thinnedfrom the second main surface sides thereof to an extent where the secondmain surfaces of the semiconductor chips 5 are exposed and where thevertical electrodes 20 are just about to be exposed from the second mainsurface side of the substrate 1. Grinding is performed until the totalthickness of the integrated body of the semiconductor chips 5 and thesubstrate 1 is reduced to, e.g., 800 μm and the thickness of thesubstrate 1 is reduced to, e.g., 60 μm.

Next, dry etching is performed by means of RIE or the like on the secondmain surface of the substrate 1 so as to expose the vertical electrodes20. The penetrating electrodes 2 shown in FIG. 15 can be therebyobtained.

Finally, as in the case of the aforementioned manufacturing methods, theintegrated body of the substrate 1 and the semiconductor chips 5 is cutfor each of the semiconductor chips 5 by dicing saw to obtain thesemiconductor device shown in FIG. 1.

As in the case of the aforementioned manufacturing methods, the effectsproduced by this manufacturing method include restraining occurrence ofvoids in the underfill material 7 and the molding material 8 anddeformation, such as warpage, of the substrate 1.

A semiconductor device was manufactured for testing according to theabove-mentioned manufacturing methods. A high-resistance silicon waferwas used as the substrate 1, and an insulating film was formed onrequired areas, including the second main surface of the substrate 1.The capacitance of the semiconductor device manufactured for testingbased on this manufacturing method was similar to those of thesemiconductor devices based on the aforementioned manufacturing methods,and the CPU was confirmed to operate normally. The above resultsconfirmed that a semiconductor device of three-dimensionalstructure—i.e., the semiconductor chips 5 and the elements 4 stacked onthe substrate 1, which has been traditionally difficult tomanufacture—could be easily manufactured based on this manufacturingmethod.

In the above embodiments, examples of the semiconductor chips 5 mountedon the substrate 1 by means of flip-chip interconnection wereillustrated. Three-dimensional integrated semiconductor circuits may beused instead of the semiconductor chips 5. Such three-dimensionalintegrated semiconductor circuits may be ones that are made by stackinga plurality of semiconductor chips.

In addition, the semiconductor chips 5 or the three-dimensionalintegrated semiconductor circuits may be disposed such that the surfaceon which the circuits of the semiconductor chips 5 or the semiconductorchips comprised in the three-dimensional integrated semiconductorcircuits are formed faces a direction opposite to the substrate 1. Inthis case, the input/output terminals of the semiconductor chips 5 orthe semiconductor chips comprised in the three-dimensional integratedsemiconductor circuits, which oppose the substrate 1, are connected tothe connecting pads of the substrate 1 via the electrodes penetratingthrough the semiconductor chips.

Embodiments of the present invention have been explained above.Modifications to these embodiments or combinations thereof that need tobe made based on design considerations or other factors are consideredto fall within the scope of the invention, which is related to specificexamples of the invention as recited in the claims or described in theembodiments.

In addition, the present application is based on Japanese PatentApplication No. 2007-052103, filed on Mar. 1, 2007. The specification,claims, drawing of this application are herein incorporated by referencein its entirety.

INDUSTRIAL APPLICABILITY

The present invention is suitably applicable to a semiconductor deviceof three-dimensional structure, e.g., in which capacitors are formed ona substrate surface and semiconductor chips are stacked on thecapacitors.

1. A semiconductor device comprising: a substrate having connecting pads which are formed on a first main surface thereof and input/output pads which are formed on a second main surface thereof, the input/output pads being connected to the connecting pads; a semiconductor chip disposed to oppose the first main surface of the substrate, input/output terminals thereof being connected to the connecting pads; an underfill material that is injected into a space between the substrate and the semiconductor chip; and a molding material that encapsulates the first main surface of the substrate, which is not covered with the underfill material, and side surfaces of the semiconductor chip.
 2. The semiconductor device according to claim 1, wherein the semiconductor chip is disposed such that a first main surface thereof, on which a circuit is formed, opposes the first main surface of the substrate.
 3. The semiconductor device according to claim 1, wherein the underfill material is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %; and the molding material is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C.
 4. A manufacturing method of a semiconductor device comprising: a connecting pad forming step of forming connecting pads on a first main surface of a substrate; a connecting step of disposing a semiconductor chip such that the semiconductor chip opposes the first main surface of the substrate and connecting the connecting pads to input/output terminals provided on a first main surface of the semiconductor chip; an underfill material injecting step of injecting an underfill material in a space between the substrate and the semiconductor chip; a molding material forming step of forming a molding material that encapsulates side surfaces of the semiconductor chip and the first main surface of the substrate, which is not covered with the underfill material; and a first thinning step of thinning the substrate from a side of a second main surface thereof.
 5. The manufacturing method of a semiconductor device according to claim 4, wherein in the connecting step, the semiconductor chip is disposed such that the first main surface thereof, on which a circuit is formed, opposes the first main surface of the substrate.
 6. The manufacturing method of a semiconductor device according to claim 5 further comprising: a second thinning step of, after the molding material forming step, thinning the semiconductor chip from a side of a second main surface thereof.
 7. The manufacturing method of a semiconductor device according to claim 4, wherein the underfill material is a composite material of filler and resin in which the maximum particle diameter of the filler is 5 μm or below and whose filler content is 40 to 60 wt %.
 8. The manufacturing method of a semiconductor device according to claim 7, wherein the molding material is a composite material of filler and resin whose filler content is over 75 wt % and in which the glass transition temperature of the resin is over 180° C.
 9. The manufacturing method of a semiconductor device according to claim 8, wherein in the molding material forming step, the substrate, except the second main surface thereof, and the semiconductor chip are immersed into a molding material melt and are pressed by applying pressure thereto from the side of the second main surface of the substrate at a specified temperature for a specified period in a vacuum environment, and the molding material melt is cured, so as to form the molding material.
 10. The manufacturing method of a semiconductor device according to claim 9, wherein in the molding material forming step, the second main surface of the substrate is fixed to a film-shaped jig, and the substrate and the semiconductor chip are immersed into the molding material melt and pressed by applying pressure thereto from a side of the film-shaped jig.
 11. The manufacturing method of a semiconductor device according to claim 10, wherein in the molding material forming step, a spacer is inserted between the second main surface of the substrate and the film-shaped jig, and the substrate is fixed to the film-shaped jig, so as to form the molding material that covers the second main surface of the substrate. 